Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors

Abstract

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

References in corpus (10)

• Two Dimensional Atomic Crystals
• Boron nitride substrates for high-quality graphene electronics
• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Valley polarization in MoS2 monolayers by optical pumping
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Channel Length Scaling of MoS2 MOSFETs
• Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
• Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
• Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices

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