Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices

Abstract

We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K). Transfer length measurements reveal monolayer mobility of ~20 cm2/V/s on SiO2 substrates at 300 K and practical carrier densities (>2x10^12 1/cm^2). We also demonstrate the highest current density reported to date (~270 uA/um or 44 MA/cm^2) at 300 K for an 80 nm device from CVD-grown monolayer MoS2. Using simulations, we discuss what improvements of monolayer MoS2 are still required to meet technology roadmap requirements for low power (LP) and high performance (HP) applications. Such results are an important step towards large-area electronics based on monolayer semiconductors.

to be published in 2D Materials

References in corpus (8)

• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
• Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
• Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
• Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
• Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS${}_2$
• Multiwavelength excitation Raman Scattering Analysis of bulk and 2 dimensional MoS2: Vibrational properties of atomically thin MoS2 layers

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