Intrinsic Electrical Transport and Performance Projections of Synthetic Monolayer MoS2 Devices

Abstract

We demonstrate monolayer MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated devices over a wide range of carrier densities (up to ~10^13 1/cm^2) and temperatures (80-500 K). Transfer length measurements reveal monolayer mobility of ~20 cm2/V/s on SiO2 substrates at 300 K and practical carrier densities (>2x10^12 1/cm^2). We also demonstrate the highest current density reported to date (~270 uA/um or 44 MA/cm^2) at 300 K for an 80 nm device from CVD-grown monolayer MoS2. Using simulations, we discuss what improvements of monolayer MoS2 are still required to meet technology roadmap requirements for low power (LP) and high performance (HP) applications. Such results are an important step towards large-area electronics based on monolayer semiconductors.

arXiv commentto be published in 2D Materials

References in corpus (19)

• Anomalous Lattice Vibrations of Single and Few-Layer MoS2
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
• Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers
• Phonons in single and few-layer MoS2 and WS2
• Carbon Nanotubes as Schottky Barrier Transistors
• Chloride Molecular Doping Technique on 2D Materials: WS2 and MoS2
• Towards Intrinsic Charge Transport in Monolayer Molybdenum Disulfide by Defect and Interface Engineering
• Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition
• Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
• Intrinsic Electrical Transport Properties of Monolayer Silicene and MoS2 from First Principles
• Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides
• Band-Like Transport in High Mobility Unencapsulated Single-Layer MoS2 Transistors
• Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
• Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS${}_2$
• High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
• Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
• Charge Scattering and Mobility in Atomically Thin Semiconductors
• Multiwavelength excitation Raman Scattering Analysis of bulk and 2 dimensional MoS2: Vibrational properties of atomically thin MoS2 layers

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• Theoretical analysis of thermal boundary conductance of MoS2-SiO2 and WS2-SiO2 interface
• Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates
• One-Dimensional Edge Contact to Encapsulated MoS2 with a Superconductor
• Semimetal-Monolayer Transition Metal Dichalcogenides Photodetectors for Wafer-Scale Ultraviolet Photonics