S2DS: Physics-Based Compact Model for Circuit Simulation of Two-Dimensional Semiconductor Devices Including Non-Idealities

Abstract

We present a physics-based compact model for two-dimensional (2D) field-effect transistors (FETs) based on monolayer semiconductors such as MoS2. A semi-classical transport approach is appropriate for the 2D channel, enabling simplified analytical expressions for the drain current. In addition to intrinsic FET behavior, the model includes contact resistance, traps and impurities, quantum capacitance, fringing fields, high-field velocity saturation and self-heating, the latter being found to play a strong role. The model is calibrated with state-of-the-art experimental data for n- and p-type 2D-FETs, and it can be used to analyze device properties for sub-100 nm gate lengths. Using the experimental fit, we demonstrate feasibility of circuit simulations using properly scaled devices. The complete model is implemented in SPICE-compatible Verilog-A, and a downloadable version is freely available on the nanoHUB.org.

to be published in J. Applied Physics

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• Quasi-ballistic thermal transport across MoS${}_2$ thin films
• Ab-initio NEGF Perspective of Ultra-Scaled CMOS: From 2D-material Fundamentals to Novel Dynamically-Doped Transistors
• Reduced Thermal Conductivity of Supported and Encased Monolayer and Bilayer MoS${}_2$
• Thermal Boundary Conductance of Two-Dimensional $Mo{S}_2$ Interfaces
• Compact modeling technology for the simulation of integrated circuits based on graphene field-effect transistors
• Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances
• Does carrier velocity saturation help to enhance fmax in graphene field-effect transistors?
• Compact Modeling of pH-Sensitive FETs Based on Two-Dimensional Semiconductors
• Valley-Coupled-Spintronic Non-Volatile Memories with Compute-In-Memory Support
• Graphene on Silicon Hybrid Field-Effect Transistors
• Physics-based bias-dependent compact modeling of 1/f noise in single- to few- layer 2D-FETs
• Piezoelectric Strain FET (PeFET) based Non-Volatile Memories
• Improving Electric Contacts to Two-Dimensional Semiconductors