Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors

Abstract

We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to 15%. Heating effects are reduced if the supporting insulator is thinned, or in shorter channel devices by partial heat sinking at the contacts. The transient behavior of such devices has thermal time constants of ~30-300 ns, dominated by the thickness of the supporting insulator and that of device capping layers (a behavior also expected in ultrathin body SOI transistors). The results shed important physical insight into the high-field and transient behavior of graphene transistors.

IEEE Electron Device Letters, DOI: 10.1109/LED.2012.2230393 (2013)

References in corpus (4)

• Mobility and Saturation Velocity in Graphene on SiO2
• Thermal infrared emission reveals the Dirac point movement in biased graphene
• Thermally-Limited Current Carrying Ability of Graphene Nanoribbons
• Imaging, simulation, and electrostatic control of power dissipation in graphene devices

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