activity
20102017
most citedImproved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

548 citations · 1.6k across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2017★ 351 cited

Bright visible light emission from graphene

Young Duck Kim, Hakseong Kim, Yujin Cho +18

Graphene and related two-dimensional materials are promising candidates for atomically thin, flexible, and transparent optoelectronics. In particular, the strong light-matter inter…

cond-mat.mes-hall2016★ 548 cited

Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition

Chris D. English, Gautam Shine, Vincent E. Dorgan +2

The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (Rc). Here we present a systematic study of scaling MoS2 devices and contacts wit…

cond-mat.mes-hall2016

Role of remote interfacial phonon (RIP) scattering in heat transport across graphene/SiO2 interfaces

Yee Kan Koh, Austin S. Lyons, Myung-Ho Bae +4

Heat transfer across interfaces of graphene and polar dielectrics (e.g. SiO2) could be mediated by direct phonon coupling, as well as electronic coupling with remote interfacial ph…

cond-mat.mes-hall2013★ 163 cited

High-Field Electrical and Thermal Transport in Suspended Graphene

Vincent E. Dorgan, Ashkan Behnam, Hiram J. Conley +2

We study the intrinsic transport properties of suspended graphene devices at high fields (>1 V/um) and high temperatures (>1000 K). Across 15 samples, we find peak (average) satura…

cond-mat.mes-hall2012★ 86 cited

Role of Joule Heating on Current Saturation and Transient Behavior of Graphene Transistors

Sharnali Islam, Zuanyi Li, Vincent E. Dorgan +2

We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output cond…

cond-mat.mes-hall2010★ 458 cited

Mobility and Saturation Velocity in Graphene on SiO2

Vincent E. Dorgan, Myung-Ho Bae, Eric Pop

We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (~1 V/um). Data are analyzed with practical models including g…