Mobility and Saturation Velocity in Graphene on SiO2

Abstract

We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (~1 V/um). Data are analyzed with practical models including gated carriers, thermal generation, "puddle" charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2x10^12 cm^-2. Saturation velocity is >3x10^7 cm/s at low carrier density, and remains greater than in Si up to 1.2x10^13 cm^-2. Transport appears primarily limited by the SiO2 substrate, but results suggest intrinsic graphene saturation velocity could be more than twice that observed here.

References in corpus (6)

• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• A self-consistent theory for graphene transport
• Energy Dissipation and Transport in Nanoscale Devices
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
• Spatially resolved spectroscopy of monolayer graphene on SiO2

Cited by in corpus (3)

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• Reliably Counting Atomic Planes of Few-Layer Graphene (n>4)