A Graphene-based Hot Electron Transistor
arXiv:1211.2949 · doi:10.1016/j.sse.2013.02.008
Abstract
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.
18 pages, 6 figures
References in corpus (15)
- Electric Field Effect in Atomically Thin Carbon Films
- The Raman Fingerprint of Graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Graphene plasmonics
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Gate-induced insulating state in bilayer graphene devices
- Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
- A Graphene Field-Effect Device
- Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
- Microcavity-integrated graphene photodetector
- Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
- Mobility and Saturation Velocity in Graphene on SiO2
- Light-matter interaction in a microcavity-controlled graphene transistor
- Vertical Graphene Base Transistor
- RF Performance Projections of Graphene FETs vs. Silicon MOSFETs