activity
20112016
most citedVertical Graphene Base Transistor

160 citations · 418 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2016★ 24 cited

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

G. Lupina, C. Strobel, J. Dabrowski +8

Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 14…

cond-mat.mes-hall2015★ 41 cited

Going Ballistic: Graphene Hot Electron Transistors

Sam Vaziri, Anderson D. Smith, Mikael Östling +11

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graph…

cond-mat.mtrl-sci2014★ 15 cited

Deposition of thin silicon layers on transferred large area CVD graphene

Grzegorz Lupina, Julia Kitzmann, Mindaugas Lukosius +3

Physical vapor deposition of Si onto transferred graphene is investigated. At elevated temperatures, Si nucleates preferably on wrinkles and multilayer graphene islands. In some ca…

cond-mat.mes-hall2013★ 60 cited

Graphene Grown on Ge(001) from Atomic Source

Gunther Lippert, Jarek Dabrowski, Thomas Schroeder +8

Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on…

cond-mat.mtrl-sci2013★ 18 cited

Nucleation and growth of HfO layers on graphene by CVD

Grzegorz Lupina, Mindaugas Lukosius, Julia Kitzmann +3

A seed layer-free growth of HfO on commercially available CVD graphene from various suppliers is investigated. It is revealed that the samples of monolayer graphene transferred…

cond-mat.mes-hall2012★ 27 cited

A Graphene-based Hot Electron Transistor

Sam Vaziri, Grzegorz Lupina, Christoph Henkel +6

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially comp…