Nucleation and growth of HfO${}_2$ layers on graphene by CVD

Abstract

A seed layer-free growth of HfO${}_2$ on commercially available CVD graphene from various suppliers is investigated. It is revealed that the samples of monolayer graphene transferred from Cu to SiO${}_2$/Si substrates have different coverage with bi- and multi-layer graphene islands. We find that the distribution and number of such islands impact the nucleation and growth of HfO${}_2$ by CVD. In particular, we show that the edges and surface of densely distributed bi-layer graphene islands provide good nucleation sites for conformal CVD HfO${}_2$ layers. Dielectric constant of 16 is extracted from measurements on graphene- HfO${}_2$-TiN capacitors.

4 pages, 6 figures

References in corpus (3)

• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
• Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

Cited by in corpus (4)

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• Going Ballistic: Graphene Hot Electron Transistors
• Plasma-enhanced chemical vapor deposition of amorphous Si on graphene
• Deposition of thin silicon layers on transferred large area CVD graphene