Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

Abstract

We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods.

References in corpus (2)

• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Surface energy engineering of graphene

Cited by in corpus (6)

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• Large-scale BN tunnel barriers for graphene spintronics
• Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
• Direct atomic layer deposition of ultra-thin $A{l}_2{O}_3$ and $Hf{O}_2$ films on gold-supported monolayer $Mo{S}_2$
• Plasma-enhanced atomic layer deposition of Al${}_2$O${}_3$ on graphene using monolayer hBN as interfacial layer
• Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks