Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

Abstract

We report on a large improvement in the wetting of Al2O3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al2O3/graphene stack is then transferred to SiO2 by standard methods.

References in corpus (9)

• 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
• Quantifying defects in graphene via Raman spectroscopy at different excitation energies
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Surface energy engineering of graphene
• Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
• The Deposition of High-Quality HfO2 on Graphene and the Effect of Remote Oxide Phonon Scattering
• Understanding Controls on Interfacial Wetting at Epitaxial Graphene: Experiment and Theory
• Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric
• Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface

Cited by in corpus (10)

• Graphene-Passivated Nickel as an Oxidation-Resistant Electrode for Spintronics
• Measuring the Proton Selectivity of Graphene Membranes
• Large-scale BN tunnel barriers for graphene spintronics
• Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
• Direct atomic layer deposition of ultra-thin $A{l}_2{O}_3$ and $Hf{O}_2$ films on gold-supported monolayer $Mo{S}_2$
• Plasma-enhanced atomic layer deposition of Al${}_2$O${}_3$ on graphene using monolayer hBN as interfacial layer
• Nucleation and growth of HfO${}_2$ layers on graphene by CVD
• Long-Range Propagation and Interference of $d$-wave Superconducting Pairs in Graphene
• Towards Non-Volatile Spin Orbit Devices: Deposition of Ferroelectric Hafnia on Monolayer Graphene/Co/HM Stacks
• Transfer of Graphene with Protective Oxide Layers