Plasma-enhanced atomic layer deposition of Al${}_2$O${}_3$ on graphene using monolayer hBN as interfacial layer

Abstract

The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al${}_2$O${}_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al${}_2$O${}_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al${}_2$O${}_3$ and can be seen as an indicator for high quality dielectric films.

References in corpus (19)

• The electronic properties of graphene
• Topological insulators and superconductors
• Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
• Measurement of the Optical Conductivity of Graphene
• Light-emitting diodes by bandstructure engineering in van der Waals heterostructures
• A Graphene Field-Effect Device
• Operation of Graphene Transistors at GHz Frequencies
• Chemical reactivity imprint lithography on graphene: Controlling the substrate influence on electron transfer reactions
• Raman spectroscopy as probe of nanometer-scale strain variations in graphene
• Interference effect on Raman spectrum of graphene on SiO_2/Si
• Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides
• Origin of New Broad Raman D and G Peaks in Annealed Graphene
• Integrating Graphene into Semiconductor Fabrication Lines
• Tunable crystal symmetry in graphene-boron nitride heterostructures with coexisting moiré superlattices
• Wafer-scale integration of graphene-based photonic devices
• Identifying suitable substrates for high-quality graphene-based heterostructures
• Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
• Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
• Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride

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