activity
20062024
most citedGraphene-Based Integrated Photonics For Next-Generation Datacom And Telecom

412 citations · 2.3k across the 43 of their papers we have counts for

collaborators

45 papers

physics.app-ph2024

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Ardeshir Esteki, Sarah Riazimehr, Agata Piacentini +14

Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges r…

physics.app-ph2023★ 13 cited

Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators

Yury Yu. Illarionov, Theresia Knobloch, Burkay Uzlu +11

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequenc…

cond-mat.mes-hall2023★ 21 cited

CVD Graphene Contacts for Lateral Heterostructure MoS Field Effect Transistors

Daniel S. Schneider, Leonardo Lucchesi, Eros Reato +12

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transi…

cond-mat.mes-hall2023★ 7 cited

Graphene-Quantum Dot Hybrid Photodetectors from 200 mm Wafer Scale Processing

Sha Li, Zhenxing Wang, Bianca Robertz +14

A 200 mm processing platform for the large-scale production of graphene field-effect transistor-quantum dot (GFET-QD) hybrid photodetectors is demonstrated. Comprehensive statistic…

cond-mat.mtrl-sci2022★ 22 cited

Plasma-enhanced atomic layer deposition of AlO on graphene using monolayer hBN as interfacial layer

Barbara Canto, Martin Otto, Michael J. Powell +7

The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the pl…

physics.app-ph2022★ 28 cited

Zero Bias Power Detector Circuits based on MoS Field Effect Transistors on Wafer-Scale Flexible Substrates

Eros Reato, Paula Palacios, Burkay Uzlu +13

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS field effect transistors (FETs). The MoS…