CVD Graphene Contacts for Lateral Heterostructure MoS${}_2$ Field Effect Transistors

Abstract

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k$\Omega$$\mu$m and high on/off current ratios of 10${}^8$. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits.

arXiv comment39 pages

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Cited by in corpus (1)

• Contact Resistance Optimization in MoS${}_2$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications