activity
20102024
most citedMobility engineering and metal-insulator transition in monolayer MoS2

1.8k citations · 9.2k across the 44 of their papers we have counts for

collaborators

45 papers

cond-mat.mes-hall2024

Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

Gabriele Pasquale, Zhe Sun, Kenji Watanabe +2

The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics, and spintronics. However, ac…

cond-mat.mes-hall2023

A high- wide-gap layered dielectric for two-dimensional van der Waals heterostructures

A. Söll, E. Lopriore, A. K. Ottesen +9

Van der Waals heterostructures of two-dimensional materials have opened up new frontiers in condensed matter physics, unlocking unexplored possibilities in electronic and photonic…

cond-mat.mes-hall2023★ 20 cited

Electrical detection of the flat band dispersion in van der Waals field-effect structures

Gabriele Pasquale, Edoardo Lopriore, Zhe Sun +6

Two-dimensional flat-band systems have recently attracted considerable interest due to the rich physics unveiled by emergent phenomena and correlated electronic states at van Hove…

cond-mat.soft2023★ 2 cited

Nanofluidic logic with mechano-ionic memristive switches

Theo Emmerich, Yunfei Teng, Nathan Ronceray +7

While most neuromorphic systems are based on nanoscale electronic devices, nature relies on ions for energy-efficient information processing. Therefore, finding memristive nanoflui…

cond-mat.mes-hall2023★ 16 cited

Electrically tunable dipolar interactions between layer-hybridized excitons

Daniel Erkensten, Samuel Brem, Raul Perea-Causin +5

Transition-metal dichalcogenide bilayers exhibit a rich exciton landscape including layer-hybridized excitons, i.e. excitons which are of partly intra- and interlayer nature. In th…

cond-mat.mes-hall2023★ 21 cited

CVD Graphene Contacts for Lateral Heterostructure MoS Field Effect Transistors

Daniel S. Schneider, Leonardo Lucchesi, Eros Reato +12

Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transi…