Highly-Oriented Atomically Thin Ambipolar MoSe${}_2$ Grown by Molecular Beam Epitaxy

Abstract

Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we used molecular beam epitaxy (MBE) to grow atomically thin MoSe${}_2$ on GaAs(111)B. No intermediate compounds were detected at the interface of as-grown films. Careful optimization of the growth temperature can result in the growth of highly aligned films with only two possible crystalline orientations due to broken inversion symmetry. As-grown films can be transferred onto insulating substrates allowing their optical and electrical properties to be probed. By using polymer electrolyte gating, we have achieved ambipolar transport in MBE-grown MoSe${}_2$. The temperature-dependent transport characteristics can be explained by the 2D variable-range hopping (2D-VRH) model, indicating that the transport is strongly limited by the disorder in the film.

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Cited by in corpus (9)

• Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides
• Point defects in the 1$T^{\prime }$ and 2$H$ phases of single-layer MoS${}_2$: A comparative first-principles study
• Hole Transport in Exfoliated Monolayer MoS${}_2$
• Mixed-Salt Enhanced Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides
• Magnetic exchange interactions in monolayer CrI${}_3$ from many-body wavefunction calculations
• Single-layer $1T^{\prime }$-MoS${}_2$ under electron irradiation from $ab$ $initio$ molecular dynamics
• Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe${}_2$ few-layers on SiO${}_2$/Si
• Wannier-Function-Based Approach to Coupled Exciton-Phonon-Photon Dynamics in Two-Dimensional Semiconductors
• Photoluminescence efficiency of MBE-grown MoSe${}_2$ monolayers featuring sharp excitonic lines and diverse grain structures