Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe few-layers on SiO/Si
arXiv:1906.03014 · doi:10.1088/2053-1583/ab10f4
Abstract
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric and magnetic doping of TMDC layers to develop basic devices such as p-n junctions or diluted magnetic semiconductors for spintronic applications are also an important field of investigation. Here, we have developed two different techniques to grow MoSe mono- and multi-layers on SiO/Si substrates over large areas. First, we co-deposited Mo and Se atoms on SiO/Si by molecular beam epitaxy in the van der Waals regime to obtain continuous MoSe monolayers over 1 cm. To grow MoSe multilayers, we then used the van der Waals solid phase epitaxy which consists in depositing an amorphous Se/Mo bilayer on top of a co-deposited MoSe monolayer which serves as a van der Waals growth template. By annealing, we obtained continuous MoSe multilayers over 1 cm. Moreover, by inserting a thin layer of Mn in the stack, we could demonstrate the incorporation of up to 10 \% of Mn in MoSe bilayers.
arXiv comment32 pages, 13 figures
References in corpus (15)
- Atomically thin MoS2: A new direct-gap semiconductor
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Control of valley polarization in monolayer MoS2 by optical helicity
- Valley polarization in MoS2 monolayers by optical pumping
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Extraordinary room-temperature photoluminescence in WS2 monolayers
- Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
- Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
- Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
- Structural and Electrical Properties of MoTe and MoSe Grown by Molecular Beam Epitaxy
- Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit
- Highly-Oriented Atomically Thin Ambipolar MoSe Grown by Molecular Beam Epitaxy
- Line and Point Defects in MoSe2 Bilayer Studied by Scanning Tunneling Microscopy and Spectroscopy
- Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance