84 citations · 391 across the 18 of their papers we have counts for
18 papers
Giant atomic swirl in graphene bilayers with biaxial heterostrain
F. Mesple, N. R. Walet, G. Trambly de Laissardière +7
The study of moiré engineering started with the advent of van der Waals heterostructures in which stacking two-dimensional layers with different lattice constants leads to a moiré…
Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers
Djordje Dosenovic, Samuel Dechamps, Celine Vergnaud +10
Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical prope…
Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe/ferromagnet heterostructures
K. Abdukayumov, M. Mičica, F. Ibrahim +19
Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwid…
Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials
Quentin Guillet, Libor Vojacek, Djordje Dosenovic +16
Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for th…
The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM
Bruno C da Silva, Zahra S Momtaz, Lucas Bruas +4
Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of diffe…
Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM
Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy +4
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron…
High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)
Frédéric Bonell, Alain Marty, Céline Vergnaud +5
PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth…
Large-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2
Mário Ribeiro, Giulio Gentile, Alain Marty +12
In recent years, two-dimensional van der Waals materials have emerged as an important platform for the observation of long-range ferromagnetic order in atomically thin layers. Alth…
Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point
Sambit Ghosh, Taro Komori, Ali Hallal +11
Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, th…
Growth, charge and thermal transport of flowered graphene
Alessandro Cresti, Jesús Carrete, Hanako Okuno +4
We report on the structural and transport properties of the smallest dislocation loop in graphene, known as a flower defect. First, by means of advanced experimental imaging techni…
Bound hole states associated to individual vanadium atoms incorporated into monolayer WSe
Pierre Mallet, Florian Chiapello, Hanako Okuno +3
Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of m…
Spin-orbitronics at a topological insulator-semiconductor interface
T. Guillet, C. Zucchetti, A. Marchionni +9
Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform a…
New approach for the molecular beam epitaxy growth of scalable single-crystalline WSe monolayers
Céline Vergnaud, Minh-Tuan Dau, Benjamin Grévin +4
The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecu…
The valley Nernst effect in WSe
Minh-Tuan Dau, Céline Vergnaud, Alain Marty +9
The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nerns…
Van der Waals epitaxy of Mn-doped MoSe on mica
M. T. Dau, C. Vergnaud, M. Gay +8
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D…
Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe few-layers on SiO/Si
C. Vergnaud, M. Gay, C. Alvarez +10
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical dev…
Mn4N ferrimagnetic thin films for sustainable spintronics
T. Gushi, M. Jovičević Klug, J. Peña Garcia +6
Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heav…
Epitaxial electrical contact to graphene on SiC
T. Le Quang, L. Huder, F. Lipp Bregolin +10
Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-cont…