84 citations · 391 across the 18 of their papers we have counts for
3 papers · 1 filter
The influence of illumination conditions in the measurement of built-in electric field at p-n junctions by 4D-STEM
Bruno C da Silva, Zahra S Momtaz, Lucas Bruas +4
Momentum resolved 4D-STEM, also called center of mass (CoM) analysis, has been used to measure the long range built-in electric field of a silicon p-n junction. The effect of diffe…
Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM
Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy +4
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron…
Epitaxial electrical contact to graphene on SiC
T. Le Quang, L. Huder, F. Lipp Bregolin +10
Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-cont…