43 citations · 44 across the 8 of their papers we have counts for
8 papers
High temperature ferromagnetism in epitaxial monolayers of Co-doped Fe5GeTe2
Jules Courtin, Fatima Ibrahim, Davide Benettin +14
Magnetic van der Waals materials have mainly been investigated in their bulk form or as few-layers flakes. Due to the challenges in producing atomically thin films, only a few have…
A new method to probe conducting filaments in MoS-based memristors
Pierre Trousset, Lucie Le Van-Jodin, Bruno Reig +7
Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS), are emerging as promising materials for next-generation electronic devices. Th…
Growth of Highly Conductive PtSe2 Films Controlled by Raman Metrics for High-Frequency Photodetectors and Optoelectronic Mixers at 1.55 μm
Eva Desgué, Ivan Verschueren, Marin Tharrault +18
Two-dimensional PtSe2 exhibits outstanding intrinsic properties such as high carrier mobility, tunable bandgap, broadband absorption and air stability, making it ideal for (opto)el…
Multi-functional Wafer-Scale Van der Waals Heterostructures and Polymorphs
M. Micica, A. Wright, S. Massabeau +19
Van der Waals heterostructures have promised the realisation of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconv…
Enhanced optical properties of MoSe grown by molecular beam epitaxy on hexagonal boron nitride
C. Vergnaud, V. Tiwari, L. Ren +8
Transition metal dichalcogenides (TMD) like MoSe exhibit remarkable optical properties such as intense photoluminescence (PL) in the monolayer form. To date, narrow-linewidth P…
Development and optimization of large-scale integration of 2D material in memristors
Clotilde Ligaud, Lucie Le Van-Jodin, Bruno Reig +11
Two-dimensional (2D) materials like transition metal dichalcogenides (TMD) have proved to be serious candidates to replace silicon in several technologies with enhanced performance…
Atomic scale imaging of the negative charge induced by a single vanadium dopant atom in monolayer WSe using 4D-STEM
D. Dosenovic, K. Sharma, S. Dechamps +10
There has been extensive activity exploring the doping of semiconducting two-dimensional (2D) transition metal dichalcogenides in order to tune their electronic and magnetic proper…
Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance
M. T. Dau, C. Vergnaud, A. Marty +10
Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements…