activity
20172023
most citedLarge-scale epitaxy of two-dimensional van der Waals room-temperature ferromagnet Fe5GeTe2

84 citations · 391 across the 18 of their papers we have counts for

collaborators
Showing 2019Show all

6 papers · 1 filter

cond-mat.mes-hall2019★ 18 cited

Spin-orbitronics at a topological insulator-semiconductor interface

T. Guillet, C. Zucchetti, A. Marchionni +9

Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform a…

cond-mat.mtrl-sci2019

New approach for the molecular beam epitaxy growth of scalable single-crystalline WSe monolayers

Céline Vergnaud, Minh-Tuan Dau, Benjamin Grévin +4

The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation nowadays. Here, we use molecu…

cond-mat.mtrl-sci2019★ 49 cited

The valley Nernst effect in WSe

Minh-Tuan Dau, Céline Vergnaud, Alain Marty +9

The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nerns…

cond-mat.mtrl-sci2019

Van der Waals epitaxy of Mn-doped MoSe on mica

M. T. Dau, C. Vergnaud, M. Gay +8

The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D…

cond-mat.mtrl-sci2019★ 13 cited

Van der Waals solid phase epitaxy to grow large-area manganese-doped MoSe few-layers on SiO/Si

C. Vergnaud, M. Gay, C. Alvarez +10

Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical dev…

cond-mat.mtrl-sci2019★ 3 cited

Mn4N ferrimagnetic thin films for sustainable spintronics

T. Gushi, M. Jovičević Klug, J. Peña Garcia +6

Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heav…