1.8k citations · 9.2k across the 44 of their papers we have counts for
9 papers · 1 filter
Avalanche photodiodes based on MoS2/Si heterojunctions
Oriol Lopez-Sanchez, Dumitru Dumcenco, Edoardo Charbon +1
Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide ra…
Optically Active Quantum Dots in Monolayer WSe
Ajit Srivastava, Meinrad Sidler, Adrien V. Allain +3
Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spi…
MoS2 Transistors Operating at Gigahertz Frequencies
Daria Krasnozhon, Dominik Lembke, Clemens Nyffeler +2
The presence of a direct band gap and an ultrathin form factor has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (…
Electrical Transport Properties of Single-Layer WS2
Dmitry Ovchinnikov, Adrien Allain, Ying-Sheng Huang +2
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We fi…
Electron and Hole Mobilities in Single-Layer WSe2
Adrien Allain, Andras Kis
Single-layer transition metal dichalcogenide (TMD) WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band-gap. Due to low doping levels…
Valley Zeeman Effect in Elementary Optical Excitations of a Monolayer WSe2
Ajit Srivastava, Meinrad Sidler, Adrien V. Allain +3
A monolayer of a transition metal dichalcogenide (TMD) such as WSe is a two-dimensional (2D) direct band-gap valley-semiconductor having an effective Honeycomb lattice structur…