Light Generation and Harvesting in a Van der Waals Heterostructure
arXiv:1403.2743 · doi:10.1021/nn500480u
Abstract
Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition metal dichalcogenides MoS2 or WSe2 have been proposed as promising channel materials for field-effect transistors (FETs). Their high mechanical flexibility, stability and quality coupled with potentially inexpensive production methods offer potential advantages compared to organic and crystalline bulk semiconductors. Due to quantum mechanical confinement, the band gap in monolayer MoS2 is direct in nature, leading to a strong interaction with light that can be exploited for building phototransistors and ultrasensitive photodetectors. Here, we report on the realization of light-emitting diodes based on vertical heterojunctions composed of n-type monolayer MoS2 and p-type silicon. Careful interface engineering allows us to realize diodes showing rectification and light emission from the entire surface of the heterojunction. Electroluminescence spectra show clear signs of direct excitons related to the optical transitions between the conduction and valence bands. Our pn diodes can also operate as solar cells, with typical external quantum efficiency exceeding 4%. Our work opens up the way to more sophisticated optoelectronic devices such as lasers and heterostructure solar cells based on hybrids of two-dimensional (2D) semiconductors and silicon.
Submitted version
References in corpus (7)
- Electric Field Effect in Atomically Thin Carbon Films
- Two Dimensional Atomic Crystals
- Valley polarization in MoS2 monolayers by optical pumping
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- Visibility of dichalcogenide nanolayers
- Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
- Small-signal amplifier based on single-layer MoS2
Cited by in corpus (22)
- Mixed-Dimensional van der Waals Heterostructures
- Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
- Photocurrent generation with two-dimensional van der Waals semiconductors
- Ultimate Thin Vertical p-n Junction Composed of 2D Layered Molybdenum Disulfide
- Van der Waals Materials for Atomically-Thin Photovoltaics: Promise and Outlook
- Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction
- Hysteresis in the transfer characteristics of MoS2 transistors
- Photovoltaic and photothermoelectric effect in a double-gated WSe2 device
- Device physics of van der Waals heterojunction solar cells
- Heterojunction Hybrid Devices from Vapor Phase Grown MoS
- Dark excitons and the elusive valley polarization in transition metal dichalcogenides
- Exciton complexes in low dimensional transition metal dichalcogenides
- Enhanced Raman and photoluminescence response in monolayer MoS due to laser healing of defects
- Thermal light emission from monolayer MoS2
- Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
- High open-circuit voltage in transition metal dichalcogenide solar cells
- Photoresponse of atomically thin MoS2 layers and their planar heterojunctions
- Field-induced dissociation of two-dimensional excitons in transition-metal dichalcogenides
- Mechanical and liquid phase exfoliation of cylindrite: a natural van der Waals superlattice with intrinsic magnetic interactions
- Growth and applications of two-dimensional single crystals
- Lithography-free electrical transport measurements on 2D materials by direct microprobing
- Photodiodes based in La0.7Sr0.3MnO3/single layer MoS2 hybrid vertical heterostructures