Hysteresis in the transfer characteristics of MoS2 transistors

Abstract

We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trapping at the MoS2/SiO2 interface. We conclude that intrinsic defects in MoS2, such as S vacancies, which result in effective positive charge trapping, play an important role, besides H2O and O2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.

arXiv comment11 pages, 6 figures

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• Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-layer-ReS2/h-BN/Graphene Heterostructures
• Field emission in ultrathin PdSe2 back-gated transistors
• Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
• Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors
• Field Emission Characterization of MoS2 Nanoflowers
• Highly Sensitive MoS2 Photodetectors with Graphene Contacts
• Electron irradiation on multilayer PdSe${}_2$ field effect transistors
• Apparent Differences between Single Layer Molybdenum Disulfide Fabricated via Chemical Vapor Deposition and Exfoliation
• Isotropic conduction and negative photoconduction in ultrathin PtSe${}_2$ films
• Zero Bias Power Detector Circuits based on MoS${}_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates
• Field emission from two-dimensional GeAs
• Few-Layer MoS${}_2$/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection
• Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture
• Isolating the Nonlinear Optical Response of a MoS${}_2$ Monolayer under Extreme Screening of a Metal Substrate
• Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
• Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors
• Role of Defect Induced Interfacial States in Molecular Sensing: Ultrahigh- Sensitive Region for Molecular Interaction
• Novel circuit design for high-impedance and non-local electrical measurements of two-dimensional materials
• Gating monolayer and bilayer graphene with a two-dimensional semiconductor
• A high-$\kappa$ wide-gap layered dielectric for two-dimensional van der Waals heterostructures