Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors

Abstract

We study the effect of polymer coating, pressure and temperature on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We find that the removal of a layer of poly(methyl methacrylate) or decreasing the pressure change the device conductivity from p to n-type. We study the current-voltage characteristics as a function of the temperature and measure a gate-tunable Schottky barrier at the contacts with a height of 60 meV in flat-band condition. We report and discuss a change in the mobility and the subthreshold slope observed with increasing temperature. Finally, we estimate the trap density at the WSe2/SiO2 interface and study the spectral photoresponse of the device, achieving a responsivity of 0.5 AW^-1 at 700 nm wavelength and 0.37 mWcm^-2 optical power.

arXiv comment11 pages, 7 figures

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• InSe Schottky diodes based on van der Waals contacts
• Electron irradiation on multilayer PdSe${}_2$ field effect transistors
• Isotropic conduction and negative photoconduction in ultrathin PtSe${}_2$ films
• Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
• Substrate Effects on the Speed Limiting Factor of WSe${}_2$ Photodetectors
• Vacuum gauge from ultrathin MoS2 transistor