InSe Schottky diodes based on van der Waals contacts
arXiv:2007.14725 · doi:10.1002/adfm.202001307
Abstract
Two-dimensional semiconductors are excellent candidates for next-generation electronics and optoelec-tronics thanks to their electrical properties and strong light-matter interaction. To fabricate devices with optimal electrical properties, it is crucial to have both high-quality semiconducting crystals and ideal con-tacts at metal-semiconductor interfaces. Thanks to the mechanical exfoliation of van der Waals crystals, atomically-thin high-quality single-crystals can easily be obtained in a laboratory. However, conventional metal deposition techniques can introduce chemical disorder and metal-induced mid-gap states that induce Fermi level pinning and can degrade the metal-semiconductor interfaces, resulting in poorly performing devices. In this article, we explore the electrical contact characteristics of Au-InSe and graphite-InSe van der Waals contacts, obtained by stacking mechanically exfoliated InSe flakes onto pre-patterned Au or graphite electrodes without the need of lithography or metal deposition. The high quality of the metal-semiconductor interfaces obtained by van der Waals contact allows to fabricate high-quality Schottky di-odes based on the Au-InSe Schottky barrier. Our experimental observation indicates that the contact barrier at the graphite-InSe interface is negligible due to the similar electron affinity of InSe and graphite, while the Au-InSe interfaces are dominated by a large Schottky barrier.
arXiv comment25 pages, 13 figures, Main text and Supporting Information
References in corpus (27)
- Electric Field Effect in Atomically Thin Carbon Films
- Black phosphorus field-effect transistors
- 2D materials and van der Waals heterostructures
- Electronic transport in two dimensional graphene
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Isolation and characterization of few-layer black phosphorus
- Tuning the graphene work function by electric field effect
- High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
- Photocurrent generation with two-dimensional van der Waals semiconductors
- Van der Waals metal-semiconductor junction: weak Fermi level pinning enables effective tuning of Schottky barrier
- Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene
- Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
- Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
- Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
- Intrinsic electron mobility exceeding 1000 cm/Vs in multilayer InSe FETs
- Atomically thin p-n junctions based on two-dimensional materials
- The role of traps in the photocurrent generation mechanism in thin In-Se photodetectors
- Ideal Graphene/Silicon Schottky Junction Diodes
- Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
- Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets
- Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
- Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
- A WSe2 vertical field emission transistor
- Trap-assisted space charge limited transport in short channel MoS2 transistor
- InSe: a two-dimensional semiconductor with superior flexibility
- Extraction of the Schottky parameters in metal-semiconductor-metal diodes from a single current-voltage measurement
- Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors