Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials

Abstract

Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate complex devices, which would be otherwise very difficult to achieve by conventional bottom-up nanofabrication approaches, and to fabricate fully-encapsulated devices with exquisite electronic properties. The integration of 2D materials with existing technologies such as photonic and superconducting waveguides and fiber optics is another exciting possibility. Here, we review the state-of-the-art of the deterministic placement methods, describing and comparing the different alternative methods available in the literature and we illustrate their potential to fabricate van der Waals heterostructures, to integrate 2D materials into complex devices and to fabricate artificial bilayer structures where the layers present a user-defined rotational twisting angle.

arXiv commentTutorial Review, 13 figures. Authors' pre-peer review version of the article

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• Moiré Intralayer Excitons in a MoSe${}_2$/MoS${}_2$ Heterostructure
• Micromagnetometry of two-dimensional ferromagnets
• The Quantum Twisting Microscope
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• Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate for fabricating edge-contact-free van der Waals heterostructures
• Inter- and intra-layer excitons in MoS${}_2$/WS${}_2$ and MoSe${}_2$/WSe${}_2$ heterobilayers
• Recent Advances in Two-Dimensional Metal Monochalcogenides
• Coexistence of ultraheavy and ultrarelativistic Dirac quasiparticles in sandwiched trilayer graphene
• Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2
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• Ultra-clean assembly of van der Waals heterostructures
• Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction
• Derivation of Wannier orbitals and minimal-basis tight-binding hamiltonians for twisted bilayer graphene: a first-principles approach
• InSe Schottky diodes based on van der Waals contacts
• Biaxial versus uniaxial strain tuning of single-layer MoS${}_2$
• Towards Air Stability of Ultra-Thin GaSe Devices: Avoiding Environmental and Laser-Induced Degradation by Encapsulation
• Accelerated Discovery of Two-Dimensional Optoelectronic Octahedral Oxyhalides via High-Throughput Ab Initio Calculations and Machine Learning
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• Ultra-thin van der Waals crystals as semiconductor quantum wells
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• Strongly adhesive dry transfer technique for van der Waals heterostructure
• Highly Sensitive MoS2 Photodetectors with Graphene Contacts
• Microheater actuators as a versatile platform for strain engineering in 2D materials
• Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes
• Two-dimensional layered materials meet perovskite oxides: A combination for high-performance electronic devices
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• Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
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• Strongly anisotropic strain-tunability of excitons in exfoliated ZrSe${}_3$
• Fabrication of angstrom-scale two-dimensional channels for mass transport
• A system for the deterministic transfer of 2D materials under inert environmental conditions
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• Transition metal dichalcogenide dimer nano-antennas with ultra-small gaps
• Biaxial strain tuning of interlayer excitons in bilayer MoS2
• Flattening van der Waals heterostructure interfaces by local thermal treatment
• Light-matter interaction in van der Waals heterostructures
• Anomalous thickness-dependent electrical conductivity in van der Waals layered transition metal halide, Nb_3Cl_8
• Accessing the spectral function of in operando devices by angle-resolved photoemission spectroscopy
• Symmetry breakdown in franckeite: spontaneous strain, rippling and interlayer moiré
• Nonlinear optics in 2D materials: from classical to quantum
• Unveiling the origin of unconventional moire ferroelectricity
• Twisted two-dimensional material stacks for polarization optics
• Interfacial charge transfer and gate induced hysteresis in monochalcogenide InSe/GaSe heterostructures
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• Aligned Stacking of Nanopatterned 2D materials -- Towards 3D printing at atomic resolution
• Quantifying hydrogen bonding using electrically tunable nanoconfined water
• Moiré superlattice effects and band structure evolution in near-30-degree twisted bilayer graphene
• Tunable Photodetectors via in situ Thermal Conversion of TiS${}_3$ to TiO${}_2$
• Atomic Resolution Imaging of CrBr${}_3$ using Adhesion-Enhanced Grids
• ARPES signatures of few-layer twistronic graphenes
• Strong magnetic proximity effect in Van der Waals heterostructures driven by direct hybridization
• Surfactant-Mediated Epitaxial Growth of Single-Layer Graphene in an Unconventional Orientation on SiC
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• Generalized Peierls substitution for the tight-binding model of twisted multilayer graphene in a magnetic field
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• Thin-suspended 2D Materials: Facile, Versatile, and Deterministic Transfer Assembly
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