A strain tunable single-layer MoS2 photodetector

Abstract

Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can be also used to modify the characteristics of devices based on them. In this work, we study flexible and transparent photodetectors based on single-layer MoS2 under the application of biaxial strain. We find that by controlling the level of strain, we can tune the photoresponsivity (by 2-3 orders of magnitude), the response time (from <80 ms to 1.5 s) and the spectral bandwidth (with a gauge factor of 135 meV/% or 58 nm/%) of the device.

3 main text figures and 12 supporting information figures

References in corpus (9)

• Electric Field Effect in Atomically Thin Carbon Films
• Valley polarization in MoS2 monolayers by optical pumping
• Photocurrent generation with two-dimensional van der Waals semiconductors
• Mechanisms of photoconductivity in atomically thin MoS2
• Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
• Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
• A strain tunable single-layer MoS2 photodetector
• Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials
• Revisiting the buckling metrology method to determine the Young's modulus of 2D materials

Cited by in corpus (1)

• A strain tunable single-layer MoS2 photodetector