A strain tunable single-layer MoS2 photodetector

Abstract

Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can be also used to modify the characteristics of devices based on them. In this work, we study flexible and transparent photodetectors based on single-layer MoS2 under the application of biaxial strain. We find that by controlling the level of strain, we can tune the photoresponsivity (by 2-3 orders of magnitude), the response time (from <80 ms to 1.5 s) and the spectral bandwidth (with a gauge factor of 135 meV/% or 58 nm/%) of the device.

3 main text figures and 12 supporting information figures

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Cited by in corpus (16)

• A strain tunable single-layer MoS2 photodetector
• Strain-tunable orbital, spin-orbit, and optical properties of monolayer transition-metal dichalcogenides
• Biaxial versus uniaxial strain tuning of single-layer MoS${}_2$
• Microheater actuators as a versatile platform for strain engineering in 2D materials
• First-Principles Prediction of Two-Dimensional B3C2P3 and B2C4P2: Structural Stability, Fundamental Properties, and Renewable Energy Applications
• Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain
• Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors
• An automated system for strain engineering and straintronics of 2D materials
• First-Principles Mapping of the Electronic Properties of Two-Dimensional Materials for Strain-Tunable Nanoelectronics
• Electronic Properties of Defective MoS${}_2$ Monolayers Subject to Mechanical Deformations: A First-Principles Approach
• Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
• Local photodoping in monolayer MoS2
• Substrate Effects on the Speed Limiting Factor of WSe${}_2$ Photodetectors
• Strain Engineering of Quantum Emitters in Hexagonal Boron Nitride
• Vacuum gauge from ultrathin MoS2 transistor
• Uniaxial Strain-Induced Electronic Properties Alteration of MoS${}_2$ Monolayer