Strain engineering in semiconducting two-dimensional crystals

Abstract

One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS${}_2$, WS${}_2$, MoSe${}_2$ and WSe${}_2$). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc., is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed.

Review Article. 23 pages, 16 figures

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• Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides
• Anisotropic 2D materials for tunable hyperbolic plasmonics
• Strong modulation of optical properties in black phosphorus through strain-engineered rippling
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• A strain tunable single-layer MoS2 photodetector
• Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides
• Dynamics and efficient conversion of excitons to trions in non-uniformly strained monolayer WS${}_2$
• Achieving Large, Tunable Strain in Monolayer Transition-Metal Dichalcogenides
• Theory of strain in single-layer transition metal dichalcogenides
• Strain-modulated Bandgap and Piezo-resistive Effect in Black Phosphorus Field-effect Transistors
• Largely tunable band structures of few-layer InSe by uniaxial strain
• Programming moiré patterns in 2D materials by bending
• Strain-Induced Room-Temperature Ferromagnetic Semiconductors with Large Anomalous Hall Conductivity in Two-Dimensional Cr2Ge2Se6
• Strain engineering in single-, bi- and tri-layer MoS2, MoSe2, WS2 and WSe2
• Mermin-Wagner theorem, flexural modes, and degraded carrier mobility in 2D crystals with broken horizontal mirror (${\sigma }_{\mathrm{h}}$) symmetry
• Intrinsic properties of suspended MoS2 on SiO2/Si pillar arrays for nanomechanics and optics
• Quantum Hall effect and semiconductor to semimetal transition in biased black phosphorus
• Electronic Structure Theory of Strained Two-Dimensional Materials with Hexagonal Symmetry
• Atomic-Scale Strain Manipulation of a Charge Density Wave
• Electronic Band Structure of Transition Metal Dichalcogenides from Ab Initio and Slater-Koster Tight-Binding Model
• Biaxial versus uniaxial strain tuning of single-layer MoS${}_2$
• Magnon straintronics in the 2D van der Waals ferromagnet CrSBr from first-principles
• Modulated Interlayer Exciton Properties in a Two-Dimensional Moire Crystal
• Multifaceted moiré superlattice physics in twisted WSe${}_2$ bilayers
• The optical properties of few-layer InSe
• Environmental Effects in Mechanical Properties of Few-layer Black Phosphorus
• In-situ strain tuning in hBN-encapsulated graphene electronic devices
• Inverse Funnel Effect of Excitons in Strained Black Phosphorus
• Hall viscosity from elastic gauge fields in Dirac crystals
• Microheater actuators as a versatile platform for strain engineering in 2D materials
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• Screening and plasmons in pure and disordered single- and bilayer black phosphorus
• Strain-displacement relations and strain engineering in 2d materials
• Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain
• Dielectric nano-antennas for strain engineering in atomically thin two-dimensional semiconductors
• Many-body quantum Monte Carlo study of 2D materials: cohesion and band gap in single-layer phosphorene
• In-situ strain tuning of the Dirac surface states in Bi2Se3 films
• Excitonic emission in van-der-Waals nanotubes of transition metal dichalcogenides
• Emergence of highly linearly polarized interlayer exciton emission in MoSe${}_2$/WSe${}_2$ heterobilayers with transfer-induced layer corrugation
• Strongly anisotropic strain-tunability of excitons in exfoliated ZrSe${}_3$
• Valley-engineering mobilities in two-dimensional materials
• Strain-induced bound states in transition-metal dichalcogenide bubbles
• Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors
• Bottom-up fabrication of atomically precise graphene nanoribbons
• An ultrastable and robust single-photon emitter in hexagonal boron nitride
• An automated system for strain engineering and straintronics of 2D materials
• Tunable plasmon-enhanced birefringence in ribbon array of anisotropic 2D materials
• Resonant transport in Kekule-distorted graphene nanoribbons
• Strong Modulation of Optical Properties in Rippled 2D GaSe via Strain Engineering
• Single and bilayer graphene on the topological insulator Bi${}_2$Se${}_3$: Electronic and spin-orbit properties from first principles
• Oxygen-induced in-situ manipulation of the interlayer coupling and exciton recombination in Bi2Se3/MoS2 2D heterostructures
• Bending Strain Engineering of Spin Transport in Quantum Spin Hall Systems: Topological Nano-mechanospintronics
• Tailoring Photoluminescence by Strain-Engineering in Layered Perovskite Flakes
• An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices
• The flat phase of quantum polymerized membranes
• Multi-scale approach for strain-engineering of phosphorene
• Antiferromagnetic and Electric Polarized States in Two-Dimensional Janus Semiconductor Fe2Cl3I3
• Substrate interference and strain in the second harmonic generation from MoSe${}_2$ monolayers
• Tin monochalcogenide heterostructures as mechanically rigid infrared bandgap semiconductors
• Zero point motion and direct/indirect bandgap crossover in layered transition-metal dichalcogenides
• A new 2D auxetic CN2 nanostructure with high energy density and mechanical strength
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• Straintronics beyond homogeneous deformation
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• Wigner Crystals in Two-Dimensional Transition-Metal Dichalcogenides: Spin Physics and Readout
• Twist versus heterostrain control of optical properties of moiré exciton minibands
• Strain-driven chiral phonons in two-dimensional hexagonal materials
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• Density functional theory method for twisted geometries with application to torsional deformations in group-IV nanotubes
• Strain Engineering of Magnetoresistance and Magnetic Anisotropy in CrSBr
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• Lindblad approach to spatio-temporal quantum dynamics of phonon-induced carrier capture processes
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• On the propagation of Dirac fermions in graphene with the strain-induced inhomogeneous Fermi velocity
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• Unveiling optical in-plane anisotropy of 2D materials from oblique incidence of light
• Indentation of solid membranes on rigid substrates with Van-der-Waals attraction
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• Magnon dispersion in bilayers of two-dimensional ferromagnets
• Veselago focusing of anisotropic massless Dirac fermions
• Toward improved property prediction of 2D materials using many-body quantum Monte Carlo methods
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• Atomically-Thin Transition Metal Dichalcogenide Nanolasers: Challenges and Opportunities
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• Programmable Kondo Effect Formed by Landau Levels
• Enhanced Strain Transfer and Optoelectronic Performance in MoS2 Devices via Formvar Encapsulation
• Uncovering the Structural Evolution Arsenene on SiC Substrate
• Theory for strained graphene beyond the Cauchy-Born rule
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