Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides

Abstract

We report a new class of large-gap quantum spin Hall insulators in two-dimensional transition metal dichalcogenides, namely, MX${}_2$ with M=(Mo, W) and X=(S, Se, and Te), whose topological electronic properties are highly tunable by external electric field. We propose a novel topological field effect transistor made of these atomic layer materials and their van der Waals heterostructures. Our device exhibits parametrically enhanced charge-spin conductance through topologically protected transport channels, and can be rapidly switched off by electric field through topological phase transition instead of carrier depletion. Our work provides a practical material platform and device architecture for topological quantum electronics.

22 pages, 10 figures, submitted in May 2014

References in corpus (14)

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Cited by in corpus (10)

• Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides
• Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals
• Crystal Field Effect Induced Topological Crystalline Insulators In Monolayer IV-VI Semiconductors
• Topological Protected Dirac Cones in Compressed Bulk Black Phosphorus
• Quantum Spin Hall Effect in 2D Transition Metal Dichalcogenide Haeckelites
• Quantum Spin Hall Effect in IV-VI Topological Crystalline Insulators
• Electrically Tunable Quantum Spin Hall State in Topological Crystalline Insulator Thin films
• Strain-tunable topological quantum phase transition in buckled honeycomb lattices
• Structural phase transition and electronic structure evolution in Ir1-xPtxTe2 studied by scanning tunneling microscopy
• Chiral properties of topological-state loops