Robust topological edge states at the perfect surface step edge of topological insulator ZrTe${}_5$

Abstract

We report an atomic-scale characterization of ZrTe${}_5$ by using scanning tunneling microscopy. We observe a bulk bandgap of ~80 meV with topological edge states at the step edge, and thus demonstrate ZrTe${}_5$ is a two dimensional topological insulator. It is also found that an applied magnetic field induces energetic splitting and spatial separation of the topological edge states, which can be attributed to a strong link between the topological edge states and bulk topology. The perfect surface steps and relatively large bandgap make ZrTe${}_5$ be a potential candidate for future fundamental studies and device applications.

11 pages, 3 figures

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