Thickness-tuned transition of band topology in ZrTe5 nanosheets
arXiv:1611.08679 · doi:10.1103/PhysRevB.95.125135
Abstract
We report thickness-tuned electrical transport and Hall resistivity in highly anisotropic three-dimensional Dirac semimetal ZrTe5 nanosheets. We find that when the thickness of the nanosheet is blow about 40 nm, the system takes a clear transition from topological semimetal with two bands carriers to a single band with conventional hole carriers. The resistivity peak temperature T* decreases systematically with decreasing thickness down to about 40 nm, then shifts up with the further decrease of the thickness. Analysis of the data below 40 nm indicates that the hole carriers completely dominate the transport in the entire temperature range, regardless of the temperature being below or above T*. By further tracking the carrier density, we find that the Fermi level shifts consecutively downward from conduction band to the valence band as decreasing the thickness. Our experiments unambiguously reveal a highly thickness-tuned transition of band topology in ZrTe5 nanosheets.
arXiv comment15 pages, 5 figures
References in corpus (22)
- Topological Insulators
- Topological insulators and superconductors
- Discovery of a Three-dimensional Topological Dirac Semimetal, Na3Bi
- Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2
- Observation of the chiral magnetic effect in ZrTe5
- Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2
- Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2
- Transition-Metal Pentatelluride ZrTe and HfTe: a Paradigm for Large-gap Quantum Spin Hall Insulators
- Electronic Evidence of Temperature-Induced Lifshitz Transition and Topological Nature in ZrTe5
- Large linear magnetoresistance in Dirac semi-metal Cd3As2 with Fermi surfaces close to the Dirac points
- Optical spectroscopy study of three dimensional Dirac semimetal ZrTe
- Magneto-infrared spectroscopy of Landau levels and Zeeman splitting of three-dimensional massless Dirac Fermions in ZrTe
- Robust topological edge states at the perfect surface step edge of topological insulator ZrTe
- Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5
- Pressure-induced semimetal to superconductor transition in a three-dimensional topological material ZrTe5
- Experimental evidence of large-gap two-dimensional topological insulator on the surface of ZrTe5
- Weak antilocalization and localization in disordered and interacting Weyl semimetals
- Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5
- Spectroscopic evidence for bulk-band inversion and three-dimensional massive Dirac fermions in ZrTe5
- Ultrafast Optical Control of the Electronic Properties of
- Field induced topological phase transition from a three-dimensional Weyl semimetal to a two-dimensional massive Dirac metal in ZrTe5
- Electrical transport in nano-thick ZrTe sheets: from three to two dimensions
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- Multi-carrier transport in ZrTe5 film
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- Optical conductivity and resistivity in a four-band model for ZrTe from ab-initio calculations
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