Electron-electron interactions and weak anti-localization in few-layer ZrTe5 devices
arXiv:2103.14329 · doi:10.1103/PhysRevB.103.155408
Abstract
Much effort has been devoted to the electronic properties of relatively thick ZrTe5 crystals, focusing on their three-dimensional topological effects. Thin ZrTe5 crystals, on the other hand, were much less explored experimentally. Here we present detailed magnetotransport studies of few-layer ZrTe5 devices, in which electron-electron interactions and weak anti-localization are observed. The coexistence of the two effects manifests themselves in corroborating evidence presented in the temperature and magnetic field dependence of the resistance. Notably, the temperature-dependent phase coherence length extracted from weak anti-localization agrees with strong electron-electron scattering in the sample. Meanwhile, universal conductance fluctuations have temperature and gate voltage dependence that is similar to that of the phase coherence length. Lastly, all the transport properties in thin ZrTe5 crystals show strong two-dimensional characteristics. Our results provide new insight into the highly intricate properties of topological material ZrTe5.
References in corpus (33)
- Titanic Magnetoresistance in WTe2
- Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal CdAs
- Observation of the chiral magnetic effect in ZrTe5
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2
- Impurity effect on weak anti-localization in the topological insulator Bi2Te3
- Three-dimensional quantum Hall effect and metal-insulator transition in ZrTe5
- Transition-Metal Pentatelluride ZrTe and HfTe: a Paradigm for Large-gap Quantum Spin Hall Insulators
- Anomalous Hall Effect in ZrTe5
- Electronic Evidence of Temperature-Induced Lifshitz Transition and Topological Nature in ZrTe5
- Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
- Optical spectroscopy study of three dimensional Dirac semimetal ZrTe
- Robust topological edge states at the perfect surface step edge of topological insulator ZrTe
- Common Fermi-liquid origin of T-squared resistivity and superconductivity in n-type SrTiO3
- Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5
- Evidence for a strain tuned topological phase transition in ZrTe5
- Experimental evidence of large-gap two-dimensional topological insulator on the surface of ZrTe5
- Scalable T^2 resistivity in a small single-component Fermi surface
- Evidence for a Strong Topological Insulator Phase in
- Weak antilocalization in topological insulator BiTe microflakes
- Finite-temperature conductivity and magnetoconductivity of topological insulators
- Giant Planar Hall Effect in the Dirac Semimetal ZrTe5
- Gate-tuned Differentiation of Surface-conducting States in Bi1.5Sb0.5Te1.7Se1.3 Topological-insulator Thin Crystals
- 3D nature of ZrTe band structure measured by high-momentum-resolution photoemission spectroscopy
- Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe
- Giant magnetoresistance in single layer graphene flakes with a gate voltage tunable weak antilocalization
- Coexistence of topological Dirac fermions in the surface and three-dimensional Dirac cone state in the bulk of ZrTe single crystal
- Electrical transport in nano-thick ZrTe sheets: from three to two dimensions
- Thickness-tuned transition of band topology in ZrTe5 nanosheets
- Quantum Interference Theory of Magnetoresistance in Dirac Materials
- Multi-carrier transport in ZrTe5 film
- Universal Conductance Fluctuations in Electrolyte-Gated SrTiO3 Nanostructures
- Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices