Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide

Abstract

We report that Bi${}_2$Se${}_3$ thin films can be epitaxially grown on SrTiO${}_3$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.

5 pages, 4 figures.

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Cited by in corpus (8)

• Impurity effect on weak anti-localization in the topological insulator Bi2Te3
• Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi${}_2$Se${}_3$
• Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
• Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
• Ultrafast carrier and phonon dynamics in Bi2Se3 crystals
• Anomalous Hall response of topological insulators
• Giant mesoscopic spin Hall effect on surface of topological insulator
• Observation of novel interference patterns in Bi2-xFexTe3+d by Fourier transform scanning tunneling spectroscopy