Phase transition and anomalous scaling in the quantum Hall transport of topological insulator Sn-Bi1.1Sb0.9Te2S devices

Abstract

The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observed in temperature-dependent transport dissipation, one of which accords with thermal activation behavior with a gap of 2.8 meV (> 20 K), the other being attributed to variable range hopping (1-20 K). Magnetic field-driven plateau-to-plateau transition gives scaling relations of (dR${}_{xy}$/dB)${}^{max}$ \propto T${}^{-\kappa }$ and \DeltaB${}^{-1}$ \propto T${}^{-\kappa }$ with a consistent exponent of κ~ 0.2, which is half the universal value for a conventional two-dimensional electron gas. This is evidence of percolation assisted by quantum tunneling, and reveals the dominance of electron-electron interaction of the topological surface states.

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• Topological Insulators
• Topological insulators and superconductors
• Topological Insulator Materials
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Cited by in corpus (4)

• Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices
• Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation
• Antiferromagnetic topological insulating state in Tb${}_{0.02}$Bi${}_{1.08}$Sb${}_{0.9}$Te${}_2$S single crystals
• Influence of Device Geometry on Transport Properties of Topological Insulator Microflakes