activity
20172020
most citedNon-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2

116 citations · 230 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2020★ 5 cited

Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation

Faji Xie, Zhen Lian, Shuai Zhang +13

Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphe…

cond-mat.mes-hall2019★ 84 cited

Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device

Shuai Zhang, Rui Wang, Xuepeng Wang +17

Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/…

cond-mat.mes-hall2019★ 116 cited

Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2

Qianqian Liu, Bo Chen, Boyuan Wei +7

Dirac and Weyl semimetals are new discovered topological nontrivial materials with the linear band dispersions around the Dirac/Weyl points. When applying non-orthogonal electric c…

cond-mat.mes-hall2018★ 21 cited

Phase transition and anomalous scaling in the quantum Hall transport of topological insulator Sn-Bi1.1Sb0.9Te2S devices

Faji Xie, Shuai Zhang, Qianqian Liu +12

The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observ…

cond-mat.mes-hall2017★ 4 cited

Diagnosing the magnetic field-tuned symmetry nature of the topological electrons by conductance fluctuations in bulk-insulating BiSbTeSe2 devices

Shuai Zhang, Faji Xie, Xing-Chen Pan +5

We extract the quantum conductance fluctuations and study its magnetic field dependence in the gate-dependent transport of the topological electrons in bulk-insulating BiSbTeSe2 de…