Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe${}_2$

Abstract

The quantum Hall effect is studied in the topological insulator BiSbTeSe${}_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is integer valued only when the scattering is strong. For weaker interaction, a non-integer quantum Hall effect is expected and measured.

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• Quantum Spin Hall Insulator State in HgTe Quantum Wells
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Cited by in corpus (1)

• Phase transition and anomalous scaling in the quantum Hall transport of topological insulator Sn-Bi1.1Sb0.9Te2S devices