Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe${}_2$

Abstract

The quantum Hall effect is studied in the topological insulator BiSbTeSe${}_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is integer valued only when the scattering is strong. For weaker interaction, a non-integer quantum Hall effect is expected and measured.

References in corpus (20)

• Topological Insulators
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Room-Temperature Quantum Hall Effect in Graphene
• Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
• High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
• Bose-Einstein Condensation of Excitons in Bilayer Electron Systems
• Quantum Hall Effect from the Topological Surface States of Strained Bulk HgTe
• Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
• Impurity scattering and transport of fractional Quantum Hall edge state
• Topological Surface States and Dirac point tuning in ternary Bi2Te2Se class of topological insulators
• Quantum Hall Effect on Top and Bottom Surface States of Topological Insulator (Bi1-xSbx)2Te3 Films
• Quantum Hall Effect, Screening and Layer-Polarized Insulating States in Twisted Bilayer Graphene
• Independent tuning of electronic properties and induced ferromagnetism in topological insulators with heterostructure approach
• Observation of Helical Edge States and Fractional Quantum Hall Effect in a Graphene Electron-hole Bilayer
• Proximity Driven Enhanced Magnetic Order at Ferromagnetic Insulator / Magnetic Topological Insulator Interface
• Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators
• Revealing puddles of electrons and holes in compensated topological insulators
• Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice
• Three-Dimensional Topological Insulator in a Magnetic Field: Chiral Side Surface States and Quantized Hall Conductance

Cited by in corpus (7)

• Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime
• Phase transition and anomalous scaling in the quantum Hall transport of topological insulator Sn-Bi1.1Sb0.9Te2S devices
• Landau Levels of Topologically-Protected Surface States Probed by Dual-Gated Quantum Capacitance
• Topological surface states in thick partially relaxed HgTe film
• Signature of Parity Anomaly: Crossover from One Half to Integer Quantized Hall Conductance in a Finite Magnetic Field
• Observation of the surface hybridization gap in the electrical transport properties of the ultrathin topological insulator (Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$
• Enhancement in surface mobility and quantum transport of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) topological insulator by controlling the crystal growth conditions