Landau Levels of Topologically-Protected Surface States Probed by Dual-Gated Quantum Capacitance

Abstract

Spectroscopy of discrete Landau levels (LLs) in bulk-insulating three-dimensional topological insulators (3D TIs) in perpendicular magnetic field characterizes the Dirac nature of their surface states. Despite a number of studies demonstrating the quantum Hall effect (QHE) of topological surface states, quantitative evaluation of the LL energies, which serve as fundamental electronic quantities for study of the quantum states, is still limited. In this work, we explore the density of states of LLs by measuring quantum capacitance (CQ) in a truly bulk insulating 3D TI via a van der Waals heterostructure configuration. By applying dual gate voltages, we access the individual surface states' LLs and extract their chemical potentials to quantify the LL spacings of each surface. We evaluate the LLs' energies at two distinguished QH states, namely dissipationless (ν= +/-1) and dissipative (ν= 0) states in the 3D TI.

arXiv comment23 pages, 4 figures

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Cited by in corpus (3)

• 2D-Dirac surface states and bulk gap probed via quantum capacitance in a 3D topological insulator
• Method to preserve the chiral-symmetry protection of the zeroth Landau level on a two-dimensional lattice
• Influence of Device Geometry on Transport Properties of Topological Insulator Microflakes