Coherent Topological Transport on the Surface of Bi2Se3
arXiv:1212.2665 · doi:10.1038/ncomms3040
Abstract
The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in the symplectic universality class and uniquely among 2D systems remains metallic and cannot be localized by (time-reversal symmetric) disorder. However, in finite-size samples inter-surface coupling can destroy the topological protection. The question arises: At what size can a thin TI sample be treated as having decoupled topological surface states? We show that weak anti-localization(WAL) is extraordinarily sensitive to sub-meV coupling between top and bottom topological surfaces, and the surfaces of a TI film may be coherently coupled even for thicknesses as large as 12 nm. For thicker films we observe the signature of a true 2D topological metal: perfect weak anti-localization in quantitative agreement with two decoupled surfaces in the symplectic symmetry class.
21 pages 6 figures, including supplementary materials
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- Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime
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- Evidence of decoupling of surface and bulk states in Dirac semimetal
- Coulomb drag in topological insulator films
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- Coulomb drag in topological materials
- Pb-doped p-type BiSe thin films via interfacial engineering
- Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb
- Anomalously large spin-current voltages on the surface of SmB
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- Parallel and series conduction model in Topological Insulators