In-depth Analysis of Anisotropic Magnetoconductance in Bi${}_2$Se${}_3$ thin films with electron-electron interaction corrections

Abstract

A combination of out-of-plane and in-plane magnetoconductance (MC) study in topological insulators (TI) is often used as an experimental technique to probe weak anti-localization (WAL) response of the topological surface states (TSSs). However, in addition to the above WAL response, weak localization (WL) contribution from conducting bulk states are also known to coexist and contribute to the overall MC; a study that has so far received limited attention. In this article, we accurately extract the above WL contribution by systematically analyzing the temperature and magnetic field dependency of conductivity in Bi${}_2$Se${}_3$ films. For accurate analysis, we quantify the contribution of electron-electron interactions to the measured MC which is often ignored in recent WAL studies. Moreover, we show that the WAL effect arising from the TSSs with finite penetration depth, for out-of-plane and in-plane magnetic field can together explain the anisotropic magnetoconductance (AMC) and, thus, the investigated AMC study can serve as a useful technique to probe the parameters like phase coherence length and penetration depth that characterise the TSSs in 3D TIs. We also demonstrate that increase in bulk-disorder, achieved by growing the films on amorphous SiO${}_2$ substrate rather than on crystalline Al${}_2$O${}_3$(0001), can lead to stronger decoupling between the top and bottom surface states of the film.

References in corpus (41)

• Topological Insulators
• Topological insulators and superconductors
• Topological Insulators in Three Dimensions
• Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
• Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
• Massive Dirac fermions and spin physics in an ultrathin film of topological insulator
• Topological origin of subgap conductance in insulating bilayer graphene
• Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
• Impurity effect on weak anti-localization in the topological insulator Bi2Te3
• Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi${}_2$Se${}_3$
• First Principles Studies on 3-Dimentional Strong Topological Insulators: Bi2Te3, Bi2Se3 and Sb2Te3
• Effective continuous model for surface states and thin films of three dimensional topological insulators
• Quantum interference in macroscopic crystals of non-metallic Bi${}_2$Se${}_3$
• Crossover between weak localization and weak antilocalization in magnetically doped topological insulator
• Thickness-independent transport channels in topological insulator Bi2Se3 thin films
• Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
• Competition between weak localization and antilocalization in topological surface states
• Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3
• Evidence for electron-electron interaction in topological insulator thin films
• In-plane transport and enhanced thermoelectric performance in thin films of the topological insulators Bi_2Te_3 and Bi_2Se_3
• Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit
• Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
• Weak localization of bulk channels in topological insulator thin film
• Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
• Berry phase of non-ideal Dirac fermions in topological insulators
• Magnetic proximity effect at the 3D topological insulator/magnetic insulator interface
• Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator
• Transport Properties of Topological Insulators: Band Bending, Bulk Metal-to-Insulator Transition, and Weak Anti-Localization
• Weak antilocalization in topological insulator Bi${}_2$Te${}_3$ microflakes
• Coherent Topological Transport on the Surface of Bi2Se3
• Finite-temperature conductivity and magnetoconductivity of topological insulators
• Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface
• Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
• Weak antilocalization in HgTe quantum wells and topological surface states: Massive versus massless Dirac fermions
• Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE
• Parallel field magnetoresistance in topological insulator thin films
• Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect
• Dirac-Electrons-Mediated Magnetic Proximity Effect in Topological Insulator / Magnetic Insulator Heterostructures
• Observation of strong electron dephasing in disordered Cu${}_{93}$Ge${}_4$Au${}_3$ thin films
• Crossover Between Weak Antilocalization and Weak Localization and Electron-Electron Interaction in Few-Layer WTe${}_2$
• Influence of an anomalous temperature-dependence of the phase coherence length on the conductivity of magnetic topological insulators

Cited by in corpus (1)

• Anisotropic magnetoresistance: materials, models and applications