Influence of an anomalous temperature-dependence of the phase coherence length on the conductivity of magnetic topological insulators
arXiv:1806.10014 · doi:10.1103/PhysRevLett.123.036406
Abstract
Magnetotransport constitutes a useful probe to understand the interplay between electronic band topology and magnetism in spintronics devices based on topological materials. A recent theory of Lu and Shen [Phys. Rev. Lett. 112, 146601 (2014)] on magnetically doped topological insulators predicts that quantum corrections to the temperature-dependence of the conductivity can change sign during the Curie transition. This phenomenon has been attributed to a suppression of the Berry phase of the topological surface states at the Fermi level, caused by a magnetic energy gap. Here, we demonstrate experimentally that can reverse its sign even when the Berry phase at the Fermi level remains unchanged, provided that the inelastic scattering length decreases with temperature below the Curie transition.
References in corpus (29)
- Topological Insulators
- Topological insulators and superconductors
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Landau Quantization of Massless Dirac Fermions in Topological Insulator
- Crossover between weak localization and weak antilocalization in magnetically doped topological insulator
- Competition between weak localization and antilocalization in topological surface states
- Evidence for electron-electron interaction in topological insulator thin films
- A precise method for visualizing dispersive features in image plots
- Dephasing of Electrons in Mesoscopic Metal Wires
- Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
- Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator
- In-plane magnetic anisotropy of Fe atoms on BiSe(111)
- Linear magnetoresistance in topological insulators: Quantum phase coherence effects at high temperatures
- Coherent Topological Transport on the Surface of Bi2Se3
- Finite-temperature conductivity and magnetoconductivity of topological insulators
- Chemical potential dependent gap-opening at the Dirac surface states of Bi2Se3 induced by aggregated substitutional Cr atoms
- Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
- Surface Scattering via Bulk Continuum States in the 3D Topological Insulator BiSe
- Electron energy relaxation in the presence of magnetic impurities
- Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a BiSe thin film
- Weak Localization Effects as Evidence for Bulk Quantization in Thin Films Bi2Se3
- Spin-texture and magnetic anisotropy of Co adsorbed BiSe topological insulator surfaces
- Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons
- Conductivity Corrections for Topological Insulators with Spin-Orbit Impurities: A New Hikami-Larkin-Nagaoka Formula
- High Quality Ultrathin Bi2Se3 Films on CaF2 and CaF2/Si by Molecular Beam Epitaxy with a Radio Frequency Cracker Cell
- Tunable interaction-induced localization of surface electrons in antidot nanostructured Bi2Te3 thin films
- Quantum Transport in Weyl Semimetal Thin Films in the Presence of Spin-Orbit Coupled Impurities
- Theory of Weak Localization in Ferromagnetic (Ga,Mn)As
- Topological insulator homojunctions including magnetic layers: the example of n-p type (-QLs BiSe/Mn-BiSe) heterostructures
Cited by in corpus (4)
- Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in PbSnSe
- Magnetic properties of Mn-doped BiSe topological insulators: ab initio calculations
- In-depth Analysis of Anisotropic Magnetoconductance in BiSe thin films with electron-electron interaction corrections
- Anomalous Temperature Dependence of Quantum Correction to the Conductivity of Magnetic Topological Insulators