Landau Quantization of Massless Dirac Fermions in Topological Insulator
arXiv:1001.3220 · doi:10.1103/PhysRevLett.105.076801
Abstract
The recent theoretical prediction and experimental realization of topological insulators (TI) has generated intense interest in this new state of quantum matter. The surface states of a three-dimensional (3D) TI such as Bi_2Te_3, Bi_2Se_3 and Sb_2Te_3 consist of a single massless Dirac cones. Crossing of the two surface state branches with opposite spins in the materials is fully protected by the time reversal (TR) symmetry at the Dirac points, which cannot be destroyed by any TR invariant perturbation. Recent advances in thin-film growth have permitted this unique two-dimensional electron system (2DES) to be probed by scanning tunneling microscopy (STM) and spectroscopy (STS). The intriguing TR symmetry protected topological states were revealed in STM experiments where the backscattering induced by non-magnetic impurities was forbidden. Here we report the Landau quantization of the topological surface states in Bi_2Se_3 in magnetic field by using STM/STS. The direct observation of the discrete Landau levels (LLs) strongly supports the 2D nature of the topological states and gives direct proof of the nondegenerate structure of LLs in TI. We demonstrate the linear dispersion of the massless Dirac fermions by the square-root dependence of LLs on magnetic field. The formation of LLs implies the high mobility of the 2DES, which has been predicted to lead to topological magneto-electric effect of the TI.
15 pages, 4 figures
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- Topological insulators and superconductors
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- Dirac materials
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- Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
- One-dimensional Topological Edge States of Bismuth Bilayers
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- Thickness-independent transport channels in topological insulator Bi2Se3 thin films
- Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films
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- Evidence for electron-electron interaction in topological insulator thin films
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- Superconductivity in the topological semimetal YPtBi
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- Rashba spin-splitting control at the surface of the topological insulator Bi2Se3
- High-Field Shubnikov-de Haas Oscillations in the Topological Insulator BiTeSe
- Magneto-Optical Faraday and Kerr Effects in Topological Insulator Films and in Other Layered Quantized Hall Systems
- Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping
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- Quantum Oscillations in a Topological Insulator BiTeSe with Large Bulk Resistivity (6 cm)
- Persistence of Topological Order and Formation of Quantum Well States in Topological Insulators Bi2(Se,Te)3 under Ambient Conditions
- Quantum interference and Aharonov-Bohm oscillations in topological insulators
- Fully gapped topological surface states in BiSe films induced by a d-wave high-temperature superconductor
- Disordered Topological Insulators: A Non-Commutative Geometry Perspective
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- In-plane magnetic anisotropy of Fe atoms on BiSe(111)
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- Transport in three-dimensional topological insulators: theory and experiment
- Probing topological quantum matter with scanning tunnelling microscopy
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- The Role of Odd-Frequency Pairing in Multiband Superconductors
- Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a BiSe thin film
- Drive the Dirac Electrons into Cooper Pairs in SrxBi2Se3
- Tunneling into clean Heavy Fermion Compounds: Origin of the Fano Lineshape
- Imaging two-component nature of Dirac-Landau levels in the topological surface state of Bi2Se3
- Edge states and integer quantum Hall effect in topological insulator thin films
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- Topological surface states of Bi2Se3 with the coexistence of Se vacancies
- Quasiparticle Interference Studies of Quantum Materials
- Restoring Pristine Bi2Se3 Surface with an Effective Se Decapping Process
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- Coulomb drag in topological materials
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- Electric and thermoelectric transport in graphene and helical metal in finite magnetic fields
- Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods
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