Scanning Tunneling Microscopy of Gate Tunable Topological Insulator Bi2Se3 Thin Films
arXiv:1301.3935 · doi:10.1103/PhysRevB.87.115410
Abstract
Electrical field control of the carrier density of topological insulators (TI) has greatly expanded the possible practical use of these materials. However, the combination of low temperature local probe studies and a gate tunable TI device remains challenging. We have overcome this limitation by scanning tunneling microscopy and spectroscopy measurements on in-situ molecular beam epitaxy growth of Bi2Se3 films on SrTiO3 substrates with pre-patterned electrodes. Using this gating method, we are able to shift the Fermi level of the top surface states by 250 meV on a 3 nm thick Bi2Se3 device. We report field effect studies of the surface state dispersion, band gap, and electronic structure at the Fermi level.
References in corpus (29)
- Topological Insulators
- Topological insulators and superconductors
- A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
- First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
- Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
- Hexagonal Warping Effects in the Surface States of Topological Insulator BiTe
- Experimental demonstration of the topological surface states protected by the time-reversal symmetry
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Massive Dirac fermions and spin physics in an ultrathin film of topological insulator
- Oscillatory crossover from two dimensional to three dimensional topological insulators
- STM imaging of electronic waves on the surface of BiTe: topologically protected surface states and hexagonal warping effects
- Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator BiSe
- Effective continuous model for surface states and thin films of three dimensional topological insulators
- Landau Quantization of Massless Dirac Fermions in Topological Insulator
- Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3
- Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
- Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films
- Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
- Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3
- Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
- Momentum-Resolved Landau-Level Spectroscopy of Dirac Surface State in Bi2Se3
- Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two dimensional limit
- Fermi Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping
- Insulating behavior in ultra-thin bismuth selenide field effect transistors
- Low carrier concentration crystals of the topological insulator BiTeSe
- Quasiparticle Interference on the Surface of the Topological Insulator BiTe
- Surface Plasmons and Topological Insulators
- Power-Law Decay of Standing Waves on the Surface of Topological Insulators
- The tunneling density-of-states of interacting massless Dirac fermions
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- Accessing the spectral function of in operando devices by angle-resolved photoemission spectroscopy
- Chemical Potential Fluctuations in Topological Insulator (BiSb)Te Films Visualized by Photocurrent Spectroscopy
- Dispersing artifacts in FT-STS: a comparison of set point effects across acquisition modes
- Nanoscale Determination of the Mass Enhancement Factor in the Lightly-Doped Bulk Insulator Lead Selenide
- Spin-Polarized Quantum Well States on BiFeSe
- Kondo screening by the surface modes of a strong topological insulator
- Elastic scattering of surface states on three-dimensional topological insulators
- Effect of chiral selective tunneling on quantum transport in magnetic topological-insulator thin films
- Combined Raman spectroscopy and electrical transport measurements in ultra-high vacuum down to 3.7 K
- Surface-dominated Conductivity of Few-layered Antimonene
- Tunable magnetic anisotropy from higher-harmonics exchange scattering on the surface of a topological insulator