Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi${}_2$Se${}_3$

Abstract

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi${}_2$Se${}_3$ in an electric field effect (EFE) geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low bulk carrier density to change the sign of the Hall density with the gate voltage $V_g$. We find that the temperature $T$ and magnetic field dependent transport properties in the vicinity of this $V_g$ can be explained by a bulk channel with activation gap of approximately 50 meV and a relatively high mobility metallic channel that dominates at low $T$. The conductance (approximately 2 $\times$ 7$e^2/h$), weak anti-localization, and metallic resistance-temperature profile of the latter lead us to identify it with the protected surface state. The relative smallness of the observed gap implies limitations for EFE topological insulator devices at room temperature.

4 pages, 4 figures. In new version, panels have been removed from Figures 1, 2, and 4 to improve clarity. Additional data included in Figure 4. Introduction and discussion revised and expanded

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Cited by in corpus (3)

• Impurity effect on weak anti-localization in the topological insulator Bi2Te3
• Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
• Low-Frequency Current Fluctuations in Graphene-like Exfoliated Thin-Films of Topological Insulators