Giant plateau in the THz Faraday angle in gated Bi2Se3

Abstract

We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of magnitude flatter than the step size expected from a single Landau Level in the low frequency limit, quantized in units of the fine structure constant. At 8 T, the plateau extends over a range of gate voltage that spans an electron density greater than 14 times the quantum flux density. Both the imaginary part of the Faraday angle and transmission measurements indicate dissipative off-axis and longitudinal conductivity channels associated with the plateau.

arXiv comment5 pages, 2 figures

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Cited by in corpus (11)

• Colloquium: Topological Band Theory
• Emergence of decoupled surface transport channels in bulk insulating Bi2Se3 thin films
• Signature of a topological phase transition in the Josephson supercurrent through a topological insulator
• Gate-tunable transport properties of in-situ capped Bi${}_2$Te${}_3$ topological insulator thin films
• Optical properties of magnetically doped ultra-thin topological insulator slabs
• Transfer matrix approach for the Kerr and Faraday rotation in layered nanostructures
• Electromagnetic signatures of chiral quantum spin liquid
• Resonant Faraday and Kerr effects due to in-gap states on the surface of a topological insulator
• The magneto-optical Faraday effect in spin liquid candidates
• Plasmon modes in the magnetically doped Single Layer and Multilayers of Helical Metals
• Observation of topological Faraday and Kerr rotations in quantum anomalous Hall state by terahertz magneto-optics