activity
20052013
most citedDual-gated bilayer graphene hot electron bolometer

492 citations · 712 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2013★ 51 cited

Photo-thermal response in dual-gated bilayer graphene

M. -H. Kim, J. Yan, R. J. Suess +3

The photovoltaic and bolometric photoresponse in gapped bilayer graphene was investigated by optical and transport measurements. A pulse coincidence technique at 1.5 um was used to…

cond-mat.str-el2012★ 16 cited

Giant plateau in the THz Faraday angle in gated Bi2Se3

Gregory S. Jenkins, Andrei B. Sushkov, Don C. Schmadel +5

We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate…

cond-mat.mes-hall2011★ 492 cited

Dual-gated bilayer graphene hot electron bolometer

J. Yan, M. -H. Kim, J. A. Elle +5

Detection of infrared light is central to diverse applications in security, medicine, astronomy, materials science, and biology. Often different materials and detection mechanisms…

cond-mat.str-el2010★ 69 cited

Terahertz Kerr and Reflectivity Measurements on the Topological Insulator Bi2Se3

G. S. Jenkins, A. B. Sushkov, D. C. Schmadel +4

We report the first terahertz Kerr measurements on bulk crystals of the topological insulator Bi2Se3. At T=10K and fields up to 8T, the real and imaginary Kerr angle and reflectanc…

cond-mat.str-el2009★ 17 cited

Infrared anomalous Hall effect in SrRuO: Evidence for crossover to intrinsic behavior

M. -H. Kim, G. Acbas, M. -H. Yang +7

The origin of the Hall effect in many itinerant ferromagnets is still not resolved, with an anomalous contribution from the sample magnetization that can exhibit extrinsic or intri…

physics.optics2009

Measurement of the infrared complex Faraday angle in semiconductors and insulators

M. -H. Kim, V. Kurz, G. Acbas +2

We measure the infrared (wavelength 11 - 0.8 microns; energy E = 0.1 - 1.5 eV) Faraday rotation and ellipticity in GaAs, BaF2, LaSrGaO4, LaSrAlO4, and ZnSe. Since these materials a…