217 citations · 548 across the 5 of their papers we have counts for
5 papers
Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films
Matthew Brahlek, Namrata Bansal, Nikesh Koirala +5
By combining transport and photo emission measurements on (Bi1-xInx)2Se3 thin films, we report that this system transforms from a topologically non-trivial metal into a topological…
Giant plateau in the THz Faraday angle in gated Bi2Se3
Gregory S. Jenkins, Andrei B. Sushkov, Don C. Schmadel +5
We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate…
Dirac cone shift of a passivated topological Bi2Se3 interface state
Gregory S. Jenkins, Andrei B. Sushkov, Don C. Schmadel +6
Gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3 enable the first spectroscopic characterization of a single topological interface…
Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder
Matthew Brahlek, Yong Seung Kim, Namrata Bansal +2
Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi…
Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
Namrata Bansal, Yong Seung Kim, Eliav Edrey +10
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve inter…