most citedEpitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

217 citations · 548 across the 5 of their papers we have counts for

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cond-mat.mes-hall2012★ 209 cited

Topological-Metal to Band-Insulator Transition in (Bi1-xInx)2Se3 Thin Films

Matthew Brahlek, Namrata Bansal, Nikesh Koirala +5

By combining transport and photo emission measurements on (Bi1-xInx)2Se3 thin films, we report that this system transforms from a topologically non-trivial metal into a topological…

cond-mat.mes-hall2012★ 25 cited

Dirac cone shift of a passivated topological Bi2Se3 interface state

Gregory S. Jenkins, Andrei B. Sushkov, Don C. Schmadel +6

Gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3 enable the first spectroscopic characterization of a single topological interface…