Single-layer magnet phase in intrinsic magnetic topological insulators, , far beyond the thermodynamic limit
arXiv:2503.06283 · doi:10.1021/acs.nanolett.4c05860
Abstract
The intrinsic magnetic topological insulator (IMTI) family has demonstrated magneto-topological properties dependent on , making it a promising platform for advanced electronics and spintronics. However, due to technical barriers in sample synthesis, their properties in the large limit remain unknown. To overcome this, we utilized the atomic layer-by-layer molecular beam epitaxy (ALL-MBE) technique and achieved IMTIs with as large as 15, far beyond the previously reported in bulk crystals or thin films. Then, we discover that the "single-layer magnet (SLM)" phase, primarily determined by intralayer ferromagnetic coupling, emerges for and remains little affected up to . Nonetheless, still, non-zero, interlayer ferromagnetic coupling is necessary to stabilize the SLM phase, suggesting that the SLM phase eventually disappears in the limit. This study uncovers the secrets of IMTIs beyond the thermodynamic limit and opens a door to diverse magneto-topological applications.
References in corpus (36)
- Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBiTe
- Prediction and observation of the first antiferromagnetic topological insulator
- Intrinsic magnetic topological insulators in van der Waals layered MnBiTe-family materials
- Topological axion states in magnetic insulator MnBiTe with the quantized magnetoelectric effect
- Robust axion insulator and Chern insulator phases in a two-dimensional antiferromagnetic topological insulator
- Experimental realization of an intrinsic magnetic topological insulator
- Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet films
- Crystal growth and magnetic structure of MnBi2Te4
- A van der Waals antiferromagnetic topological insulator with weak interlayer magnetic coupling
- Natural van der Waals heterostructural single crystals with both magnetic and topological properties
- Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects
- Variety of magnetic topological phases in the (MnBiTe)(BiTe) family
- Realization of an intrinsic, ferromagnetic topological state in MnBi8Te13
- Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4
- Odd-even layer-number effect and layer-dependent magnetic phase diagrams in MnBi2Te4
- Magnetically Controllable Topological Quantum Phase Transitions in Antiferromagnetic Topological Insulator MnBiTe
- Mn-rich MnSb2Te4: A topological insulator with magnetic gap closing at high Curie temperatures of 45-50 K
- A-type Antiferromagnetic order in MnBi4Te7 and MnBi6Te10 single crystals
- Site Mixing for Engineering Magnetic Topological Insulators
- Magnetic and transport properties in magnetic topological insulators MnBi2Te4(Bi2Te3)n (n=1,2)
- Even-Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi2Te4 Thin Films
- Magnetic topological insulator MnBi6Te10 with zero-field ferromagnetic state and gapped Dirac surface states
- Half-Magnetic Topological Insulator
- Meta-magnetism of weakly-coupled antiferromagnetic topological insulators
- Ferromagnetic-antiferromagnetic coexisting ground states and exchange bias effects in and
- Tuning the magnetism and band topology through antisite defects in Sb doped MnBi4Te7
- In-Plane Magnetic-Field-Induced Quantum Anomalous Hall Plateau Transition
- Adsorption-controlled growth of MnTe(Bi2Te3)n by molecular beam epitaxy exhibiting stoichiometry-controlled magnetism
- Delicate Ferromagnetism in MnBiTe
- Crystal structure and Raman active lattice vibrations of magnetic topological insulators MnBi2Te4 n(Bi2Te3) (n = 0, 1, . . . , 6)
- Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy
- Role of Magnetic Defects and Defect-engineering of Magnetic Topological Insulators
- High temperature, gate-free quantum anomalous Hall effect with an active capping layer
- Suppressing carrier density in (BixSb1-x)2Te3 films using Cr2O3 interfacial layers
- Spacer-layer-tunable magnetism and high-field topological Hall effect in topological insulator heterostructures
- Buffer-layer-controlled Nickeline vs Zinc-Blende/Wurtzite-type MnTe growths on c-plane Al2O3 substrates