most citedEpitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

217 citations · 548 across the 5 of their papers we have counts for

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cond-mat.mtrl-sci2011★ 81 cited

Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder

Matthew Brahlek, Yong Seung Kim, Namrata Bansal +2

Topological insulators (TIs) are predicted to be composed of an insulating bulk state along with conducting channels on the boundary of the material. In Bi2Se3, however, the Fermi…

cond-mat.mtrl-sci2011★ 217 cited

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Namrata Bansal, Yong Seung Kim, Eliav Edrey +10

Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve inter…