Van der Waals Epitaxy on Freestanding Monolayer Graphene Membrane by MBE

Abstract

Research on two-dimensional materials has expanded over the past two decades to become a central theme in condensed matter research today. Significant advances have been made in the synthesis and subsequent reassembly of these materials using mechanical methods into a vast array of hybrid structures with novel properties and ever-increasing potential applications. The key hurdles in realizing this potential are the challenges in controlling the atomic structure of these layered hybrid materials and the difficulties in harnessing their unique functionality with existing semiconductor nanofabrication techniques. Here we report on high-quality van der Waals epitaxial growth and characterization of a layered topological insulator on freestanding monolayer graphene transferred to different mechanical supports. This templated synthesis approach enables direct interrogation of interfacial atomic structure of these as-grown hybrid structures and opens a route towards creating device structures with more traditional semiconductor nanofabrication techniques.

arXiv comment13 pages, 4 figures

References in corpus (14)

• Electric Field Effect in Atomically Thin Carbon Films
• Topological Insulators
• Graphene: Status and Prospects
• Van der Waals heterostructures
• The structure of suspended graphene sheets
• Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
• Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
• Realization of Quantum Spin Hall State in Monolayer 1T'-WTe2
• Helical Metal Inside a Topological Band Insulator
• Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators
• Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy
• Electron-Beam Manipulation of Silicon Dopants in Graphene
• Assembling Di- and Multiatomic Si Clusters in Graphene via Electron Beam Manipulation
• Intrinsic Ultrathin Topological Insulators Grown via MBE Characterized by in-situ Angle Resolved Photoemission Spectroscopy